Preliminary Technical Information
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
IXFH12N90P
IXFV12N90P
IXFV12N90PS
V DSS
I D25
R DS(on)
t rr
=
=
900V
12A
900m Ω
300 ns
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXFV)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
900
V
G
D
S
D (TAB)
V DGR
T J = 25 ° C to 150 ° C, R GS = 1M Ω
900
V
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 30
± 40
12
V
V
A
PLUS220SMD (IXFV_S)
I DM
I A
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
24
6
A
A
G
S
D (TAB)
E AS
dV/dt
P D
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
500
15
380
-55 ... +150
150
-55 ... +150
mJ
V/ns
W
° C
° C
° C
TO-247 (IXFH)
D (TAB)
T L
T SOLD
M d
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
300
260
1.13/10
° C
° C
Nm/lb.in.
G = Gate
S = Source
D = Drain
TAB = Drain
F C
Weight
Mounting force (PLUS220)
TO-247
PLUS220 types
11..65/2.5..14.6
6
4
N/lb.
g
g
Features
International standard packages
Avalanche Rated
Low package inductance
Fast intrinsic diode
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Easy to mount
Space savings
High power density
BV DSS
V GS = 0V, I D = 1mA
900
V
V GS(th)
V DS = V GS , I D = 1mA
3.5
6.5
V
Applications:
I GSS
I DSS
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
± 100 nA
25 μ A
1 mA
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
900
m Ω
AC and DC motor drives
Robotics and servo controls
? 2008 IXYS CORPORATION, All rights reserved
DS100056(10/08)
相关PDF资料
IXFH12N90 MOSFET N-CH 900V 12A TO-247AD
IXFH13N100 MOSFET N-CH 1000V 12.5A TO-247
IXFH13N50 MOSFET N-CH 500V 13A TO-247AD
IXFH14N100Q2 MOSFET N-CH 1000V 14A TO-247AD
IXFH14N60P MOSFET N-CH 600V 14A TO-247
IXFH150N17T MOSFET N-CH 175V 150A TO-247
IXFH15N100P MOSFET N-CH 1000V 15A TO-247
IXFH15N80 MOSFET N-CH 800V 15A TO-247AD
相关代理商/技术参数
IXFH12N90Q 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | TO-268
IXFH13N100 功能描述:MOSFET 13 Amps 1000V 0.9 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH13N50 功能描述:MOSFET 500V 13A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH13N65 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH13N80 功能描述:MOSFET 800V 13A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH13N80Q 功能描述:MOSFET 13 Amps 800V 0.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH13N90 功能描述:MOSFET 13 Amps 900V 0.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH140N10P 功能描述:MOSFET 140 Amps 100V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube